Three-Dimensional Topography Simulator Based on the Level Set Method

For the prediction of the device performance of FinFET structures three-dimensional device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the densityof-states in a pre-processing step and the other calculates a correction for the band edge energy, have been implemented in the device simulator MinimosNT. The models have been applied to the simulation of doubleand triple-gate FinFET structures. However, while the drive current reduction can be reproduced, the carrier concentration in the fin shows only poor agreement with rigorous quantum mechanical simulation.